| PART |
Description |
Maker |
| FDB2572 FDP2572 FDB2572NL |
N-Channel PowerTrench MOSFET 150V, 29A, 54mз 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
150V N-Channel UltraFET Trench MOSFET 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
N-Channel PowerTrench MOSFET 150V, 29A, 54m蟹
N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5NJ3315 |
150V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.08ohm, Id=20A)
SURFACE MOUNT (SMD-0.5) 150V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=150V/ Rds(on)=0.08ohm/ Id=20A)
|
IRF[International Rectifier]
|
| FQAF46N15 |
150V N-Channel MOSFET
150V N - CHANNEL MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33.5A I(D) | TO-247VAR
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFB23N15 IRFSL23N15D IRFB23N15DPBF IRFS23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A)
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| FQU5N15 FQD5N15 FQD5N15TF FQD5N15TM |
150V N-Channel QFET
150V N-Channel MOSFET 4.3 A, 150 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQA36P15 |
150V P-Channel MOSFET 36 A, 150 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
150V P-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| FDPF79N15 |
150V N-Channel MOSFET 79 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| FQA90N15 |
150V N-Channel MOSFET(漏源电压50V的N沟道增强型MOSFET) 90 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDA79N15 |
150V N-Channel MOSFET 79 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| SFL3200_39 SFL3200-39 SFL3200/39 |
Logic Level 12A 150V .17Ω N-Channel Power MOSFET
Logic Level 12A 150V .17ヘ N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
|
